Tag: Semiconductor properties of silicon
Carrier transport properties and non-equilibrium carriers
Carrier transport properties Under the action of an external electric field and a magnetic field, the movement of electrons and holes in crystalline silicon leads to the transport of electric charges and generates electric current. At 300K, the resistivity of uncompensated or lightly compensated silicon material versus shallow impurity concentration is shown in Figure 1.…
Read More
Carrier concentration of doped semiconductors
The carrier concentration in doped semiconductors changes with temperature, and experiences weak ionization region, intermediate ionization region, strong ionization region, transition region and intrinsic excitation region from low temperature to high temperature. The carrier concentration of doped semiconductors can be calculated and analyzed by quantum statistics theory. There are a large number of energy states…
Read More
N-type crystalline silicon and P-type crystalline silicon
(1) N-type crystalline silicon When crystalline silicon is doped with a small amount of impurity group V elements (such as P), its 5 valence electrons form 4 covalent bonds with silicon atoms, and the V group ion nucleus has one more positive charge, forming a positive center, and one more valence electron. This electron is bound…
Read More
Energy bands and intrinsic semiconductor silicon vs. extrinsic semiconductor silicon
1. Band structure of crystalline silicon The energy bands of a crystal reflect the interactions between the various atoms in the crystal, especially the outer electrons. One energy level of n isolated atoms is split into n closely spaced near-continuous energy levels, forming an energy band, as shown in Figure 1. 2. Energy Band Model…
Read More